From Tom's Hardware:
Representatives from Intel will present a paper to discuss how they produced a 291Mb SRAM memory array to test the process – a process which uses high-k and metal gate technologies. Using a 0.171-micron^2 cell size, the device has close to 2 billion transistors and array density of 4.2-Mbit^2 – it operated at 3.8GHz at 1.1 Volts.
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